Features: · For power amplifier in DECT and PCN systems· fT = 5.5GHz· Gold metalization for high reliabilitySpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 ...
BFP136W: Features: · For power amplifier in DECT and PCN systems· fT = 5.5GHz· Gold metalization for high reliabilitySpecifications Parameter Symbol Value Unit Collector-emitter voltage ...
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· For power amplifier in DECT and PCN systems
· fT = 5.5GHz
· Gold metalization for high reliability
| Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCEO |
12 |
V |
| Collector-emitter voltage |
VCES |
20 | |
| Collector-base voltage |
VCBO |
20 | |
| Emitter-base voltage |
VEBO |
2 | |
| Collector current |
IC |
150 |
mA |
| Base current |
IB |
20 | |
| Total power dissipation1) TS 60°C |
Ptot |
1000 |
W |
| Junction temperature |
Tj |
150 |
°C |
| Ambient temperature |
TA |
-65 ... 150 | |
| Storage temperature |
Tstg |
-65 ... 150 | |
| Thermal Resistance | |||
| Parameter |
Symbol |
Value |
Unit |
| Junction - soldering point2) |
RthJS |
90 |
K/W |