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MFG:Infineon D/C:07+

MFG:Infineon D/C:07+

| Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCEO |
4.5 |
V |
| Collector-base voltage |
VCBO |
15 | |
| Emitter-base voltage |
VEBO |
1.5 | |
| Collector current |
IC |
35 |
mA |
| Base current |
IB |
3 | |
| Total power dissipation1) TS 107°C |
Ptot |
160 |
W |
| Junction temperature |
Tj |
150 |
°C |
| Ambient temperature |
TA |
-65 ... 150 | |
| Storage temperature |
Tstg |
-65 ... 150 | |
| Thermal Resistance | |||
| Parameter |
Symbol |
Value |
Unit |
| Junction - soldering point2) |
RthJS |
260 |
K/W |
1TS is measured on the emitter lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
· For high gain low noise amplifiers
· For oscillators up to 10 GHz
· Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz
· Transition frequency fT = 25 GHz
· Gold metallization for high reliability
· SIEGET ® 25 GHz fT - Line
BFP420
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