BFP420E6327

The BFP420E6327 is designed as one kind of NPN silicon RF transistor that has six points of features:(1)For high gain low noise amplifiers; (2)For oscillators up to 10 GHz; (3)Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz; (4)Transition frequency fT = 25 GHz; (5)Gold metalization for high reliability; (6)SIEGET a 25 - Line Siemens Grounded Emitter Transistor 25 GHz fT - Line.

The absolute maximum ratings of the BFP420E6327 can be summarized as:(1)Collector-emitter voltage: 4.5 V;(2)Collector-base voltage: 15 V;(3)Emitter-base voltage: 1.5 V;(4)Collector current: 35 mA;(5)Base current: 3 mA;(6)Total power dissipation, TS </= 107 °C: 160 mW;(7)Junction temperature: 150 °C;(8)Ambient temperature: -65 °C to +150 °C;(9)Storage temperature: -65 °C to +150 °C. If you want to know more information such as the electrical characteristics about the BFP420E6327, please download the datasheet in www.seekic.com or www.chinaicmart.com.