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BFP620F E7764

Features: • High gain low noise RF transistor• Small package 1.4 x 0.8 x 0.59 mm• Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz• Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz• Gold metallization for extra...

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BFP620F E7764: Features: • High gain low noise RF transistor• Small package 1.4 x 0.8 x 0.59 mm• Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz•...

BFP620F E7764 Data Sheet

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Part Number:
BFP620F E7764
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Description



Features:

• High gain low noise RF transistor
• Small package 1.4 x 0.8 x 0.59 mm
• Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
   Gms = 21 dB at 1.8 GHz
   Gma = 10 dB at 6 GHz
• Gold metallization for extra high reliability




Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
2.3
V
Collector-emitter voltage
VCES
7.5
Collector-base voltage
VCBO
7.5
Emitter-base voltage
VEBO
1.2
Collector current
IC
80
mA
Base current
IB
3
Total power dissipation1)
TS 96°C
Ptot
185
W
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 290 K/W


1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance




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