BFP650

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Power - Max: 500mW
Voltage - Collector Emitter Breakdown (Max): 4.5V
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Current - Collector (Ic) (Max): 150mA
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT343-4
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain: 10.5dB ~ 21.5dB
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V


Features:

• For high power amplifiers
• Ideal for low phase noise oscilators
• Maxim. available Gain G_ma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz f_T- Silicon Germanium technology

Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCEO	4	V
Collector-emitter voltage	VCES	13
Collector-base voltage	VCBO	13
Emitter-base voltage	VEBO	1.2
Collector current	IC	150	mA
Base current	IB	10
Total power dissipation1) TS 75°C	Ptot	500	W
Junction temperature	Tj	150	°C
Ambient temperature	TA	-65 ... 150
Storage temperature	Tstg	-65 ... 150
Thermal Resistance
Parameter	Symbol	Value	Unit
Junction - soldering point2)	RthJS	140	K/W

1T_S is measured on the collector lead at the soldering point to the pcb
2For calculation of R_thJA please refer to Application Note Thermal Resistance

Parameters:

Technical/Catalog Information	BFP650
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Frequency - Transition	37GHz
Noise Figure (dB Typ @ f)	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Current - Collector (Ic) (Max)	150mA
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 80mA, 3V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4V
Gain	21.5dB ~ 10.5dB
Power - Max	500mW
Compression Point (P1dB)	18dBm
Package / Case	SC-70-4, SC-82AB, SOT-323-4, SOT-343
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BFP650 BFP650