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BFQ135

Features: · Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gol sandwich metallization.Application· MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc.PinoutS...

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SeekIC No. : 004299807 Detail

BFQ135: Features: · Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gol sandwich metallization.Application· MATV and microwave amp...

BFQ135 Data Sheet

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Part Number:
BFQ135
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

· Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gol  sandwich metallization.




Application

· MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
25
V
VCEO collector-emitter voltage
open base
-
19
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current (DC)
-
150
mA
Ptot total power dissipation
up to Ts = 145 °C
-
2.7
W
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
200
°C




Description

NPN wideband transistor BFQ135 in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolate rom the mounting base.




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