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Part Number: BFQ621

 

 

Package Cooled: 500

 

Description: Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are iso...


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BFQ621 General Description


Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application of gold sandwich metallization ensures an optimum temperature profile and excellent reliability properties.

BFQ621 Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
25
V
VCEO collector-emitter voltage
open base
-
16
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current (DC)
-
250
mA
Ptot total power dissipation
up to Tmb = 25 °C
-
8
W
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
+200
°C

BFQ621 Features

· High power gain
· High output voltage
· High maximum junction temperature
· Gold metallization ensures excellent reliability.

BFQ621 Typical Application

It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc.

BFQ621 Connection Diagram

BFQ621  Connection Diagram

BFQ621 datasheet

BFQ621
PDF/DataSheet Download

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