BFQ621

Features: · High power gain· High output voltage· High maximum junction temperature· Gold metallization ensures excellent reliability.ApplicationIt is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc.Pinou...

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BFQ621 Picture
SeekIC No. : 004299848 Detail

BFQ621: Features: · High power gain· High output voltage· High maximum junction temperature· Gold metallization ensures excellent reliability.ApplicationIt is primarily intended for use in MATV and microwav...

floor Price/Ceiling Price

Part Number:
BFQ621
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/27

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Product Details

Description



Features:

· High power gain
· High output voltage
· High maximum junction temperature
· Gold metallization ensures excellent reliability.



Application

It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc.




Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
25
V
VCEO collector-emitter voltage
open base
-
16
V
VEBO emitter-base voltage
open collector
-
2
V
IC collector current (DC)
-
250
mA
Ptot total power dissipation
up to Tmb = 25 °C
-
8
W
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
+200
°C



Description

Silicon NPN transistor BFQ621 in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application of gold sandwich metallization ensures an optimum temperature profile and excellent reliability properties.




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