Features: · High power gain· High output voltage· High maximum junction temperature· Gold metallization ensures excellent reliability.ApplicationIt is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc.Pinou...
BFQ621: Features: · High power gain· High output voltage· High maximum junction temperature· Gold metallization ensures excellent reliability.ApplicationIt is primarily intended for use in MATV and microwav...
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It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc.
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage |
open emitter |
- |
25 |
V |
VCEO | collector-emitter voltage |
open base |
- |
16 |
V |
VEBO | emitter-base voltage |
open collector |
- |
2 |
V |
IC | collector current (DC) |
- |
250 |
mA | |
Ptot | total power dissipation |
up to Tmb = 25 °C |
- |
8 |
W |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
+200 |
°C |
Silicon NPN transistor BFQ621 in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application of gold sandwich metallization ensures an optimum temperature profile and excellent reliability properties.