Features: ·For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.· Hermetically sealed ceramic package.·HiRel/Mil screening available.·CECC-type available: CECC 50002/263.Specifications Parameter Symbol Value Unit Collector-emitter voltage ...
BFQ 72: Features: ·For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.· Hermetically sealed ceramic package.·HiRel/Mil screening available.·CECC-type available: CE...
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Transistors Switching (Resistor Biased) NPN Silicon RF TRANSISTOR
| Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCEO |
15 |
V |
| Collector-emitter voltage, VBE = 0 |
VCES |
20 | |
| Collector-base voltage |
VCBO |
20 | |
| Emitter-base voltage |
VEBO |
2.5 | |
| Collector current |
IC |
50 |
mA |
| Base current |
IB |
10 |
|
| Total power dissipationTS 112°C3) |
Ptot |
350 |
mW |
| Junction temperature |
Tj |
175 |
°C |
| Ambient temperature |
TA |
65 . + 175 | |
| Storage temperature |
Tstg |
65 . + 175 | |
| Thermal Resistance | |||
| Junction - ambient2) |
RthJA |
260 |
K/W |
| Junction - soldering point3) |
RthJS |
180 | |
1) For detailed dimensions see chapter Package Outlines.
2) Package mounted on alumina 15 mm *16.7 mm * 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.