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BFR181T

Features: · For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA· fT = 8 GHz F = 1.45 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-ba...

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BFR181T: Features: · For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA· fT = 8 GHz F = 1.45 dB at 900 MHzSpecifications Parameter Symbol Value Unit Col...

BFR181T Data Sheet

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Part Number:
BFR181T
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

· For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
· fT = 8 GHz
    F = 1.45 dB at 900 MHz




Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
20
mA
Base current
IB
2
Total power dissipationTS 79°C1)
Ptot
175
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
65 . 150
Storage temperature
Tstg
65 . 150
Thermal Resistance
Junction - soldering point2)
RthJS
405
K/W


1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance




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