Purchase BFR181W, In-stock BFR181W From SeekIC.
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- Table of contents:
BFR181W
-
Suppliers
DataSheet
General Description
BFR181W Maximum Ratings
| Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCEO |
12 |
V |
| Collector-emitter voltage |
VCES |
20 | |
| Collector-base voltage |
VCBO |
20 | |
| Emitter-base voltage |
VEBO |
2 | |
| Collector current |
IC |
20 |
mA |
| Base current |
IB |
2 | |
| Total power dissipationTS 90°C1) |
Ptot |
175 |
mW |
| Junction temperature |
Tj |
150 |
°C |
| Ambient temperature |
TA |
65 . 150 | |
| Storage temperature |
Tstg |
65 . 150 | |
| Thermal Resistance | |||
| Junction - soldering point2) |
RthJS |
345 |
K/W |
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
BFR181W Features
· For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
· fT = 8 GHz
F = 1.45 dB at 900 MHz
· fT = 8 GHz
F = 1.45 dB at 900 MHz
BFR181W
PDF/DataSheet Download
- Datasheet: BFR181W
- File Size: 81439 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·BFR1
- CENTRAL [Central Semiconductor Corp]
- Small Signal Transistors
- 34276 KB
- ·BFR10
- ETC [ETC]
- Medium Power Amplifiers and Switches
- 150290 KB
- ·BFR106
- SIEMENS [Siemens Semiconductor Group]
- NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)
- 82580 KB
- ·BFR11
- ETC [ETC]
- Medium Power Amplifiers and Switches
- 150290 KB
- ·BFR14B
- SIEMENS [Siemens Semiconductor Group]
- NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz
- 145912 KB
- ·BFR14C
- SIEMENS [Siemens Semiconductor Group]
- NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz
- 125183 KB
- ·BFR16
- CENTRAL [Central Semiconductor Corp]
- Small Signal Transistors
- 34276 KB
- ·BFR18
- ETC [ETC]
- Medium Power Amplifiers and Switches
- 150290 KB
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