BFR92A

· RF Wideband Amplifier/Oscillator
· 5GHz Transition Frequency
· Low Intermodulation Distortion
· High Power Gain
· Low Noise

Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5 cm² area.

The BFR92A is designed as one kind of NPN wideband transistor with some features such as:(1)RF wideband amplifier/oscillator;(2)5GHz transition frequency;(3)low intermodulation distortion;(4)high power gain;(5)low noise.And the mechanical data has five points:(1)case:SOT-23,molded plastic;(2)leads/ terminals:solderable per MIL-STD-202,method 208;(3)terminal connections:see diagram;(4)marking:+P2;(5)weight:0.008 grams (approx.).

The absolute maximum ratings of the BFR92A can be summarized as:(1)collector-base voltage:20 V;(2)collector-emitter voltage:15 V;(3)emitter-base voltage:2.0 V;(4)collector current-continuous:30 mA;(5)power dissipation:200 mW;(6)thermal resistance,junction to ambient:450 K/W;(7)operating and storage temperature range:-65 to +150 °C.And some electrical DC characteristics (@ TA = 25°C unless otherwise specified) can be summarized as:(1)DC current gain:65 to 150(VCE=10V,IC=14mA);(2)collector-emitter cutoff current:100 uA(VBE=0V,VCE=20V);(3)collector-base cutoff current:50 nA;(4)collector-base breakdown voltage:20 V;(5)collector-emitter breakdown voltage:15 V;(6)emitter-base breakdown voltage:2.0 V.If you want to know more information such as the electrical AC characteristics about the BFR92A,please download the datasheet in www.seekdatasheet.com .