Features: · For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.· CECC-type available: CECC 50002/256.Specifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 20 Emitter...
BFR 93P: Features: · For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.· CECC-type available: CECC 50002/256.Specifications Parameter Symbol Value Uni...
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Transistors RF Silicon Germanium NPN Silicon RF TRANSISTOR
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Transistors RF Silicon Germanium NPN Silicon RF TRANSISTOR
| Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCEO |
15 |
V |
| Collector-base voltage |
VCBO |
20 | |
| Emitter-base voltage |
VEBO |
2.5 | |
| Collector current |
IC |
50 |
mA |
| Base current |
IB |
10 | |
| Total power dissipationTS 65°C3) |
Ptot |
280 |
mW |
| Junction temperature |
Tj |
150 |
°C |
| Ambient temperature |
TA |
65 . + 150 | |
| Storage temperature |
Tstg |
65 . + 150 | |
| Thermal Resistance | |||
| Junction - ambient2) |
RthJA |
385 |
K/W |
| Junction - soldering point3) |
RthJS |
305 | |
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm * 16.7 mm *0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.