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BFS20W

Features: • Low current (max. 25 mA)• Low voltage (max. 20 V).• Very low feedback capacitance (typ. 350 fF).Application• IF and VHF applications in thick and thin-film circuits.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base volta...

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BFS20W: Features: • Low current (max. 25 mA)• Low voltage (max. 20 V).• Very low feedback capacitance (typ. 350 fF).Application• IF and VHF applications in thick and thin-film circui...

BFS20W Data Sheet

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Part Number:
BFS20W
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low current (max. 25 mA)
• Low voltage (max. 20 V).
• Very low feedback capacitance (typ. 350 fF).


Application

• IF and VHF applications in thick and thin-film circuits.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 30 V
VCEO collector-emitter voltage open base − 20 V
VEBO emitter-base voltage open collector − 4 V
IC collector current (DC)   − 25 mA
ICM peak collector current   − 25 mA
IBM peak base current     200 mA
Ptot total power dissipation Tamb 25 °C; note 1 − 200 mW
Tstg storage temperature   −65 +150
Tj junction temperature   − 150
Tamb operating ambient temperature   −65 +150



Description

NPN medium frequency transistor BFS20W in a SOT323 (SC-70) plastic package.


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