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BFS25A

Features: • Low current consumption• Low noise figure• Gold metallization ensures excellent reliability• SOT323 envelope.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 8 V VCEO collector-emitt...

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BFS25A: Features: • Low current consumption• Low noise figure• Gold metallization ensures excellent reliability• SOT323 envelope.Specifications SYMBOL PARAMETER CONDITIONS MI...

BFS25A Data Sheet

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Part Number:
BFS25A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low current consumption
• Low noise figure
• Gold metallization ensures excellent reliability
• SOT323 envelope.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 8 V
VCEO collector-emitter voltage open base − 5 V
VEBO emitter-base voltage open collector − 2 V
IC collector current (DC)   − 6.5 mA
Ptot total power dissipation up to Ts = 170 °C; note 1 − 32 mW
Tstg storage temperature   −65 150
Tj junction temperature   − 175



Description

NPN transistor BFS25A in a plastic SOT323 envelope.

BFS25A is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz.




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