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Part Number: BFT93W

 

 

 

D/C: 06+

Description: Silicon PNP transistor in a plastic,SOT323 (S-mini) package. The BFT93W uses the same crystal as the SOT23 version, BFT...


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BFT93W General Description


Silicon PNP transistor in a plastic,SOT323 (S-mini) package. The BFT93W uses the same crystal as the SOT23 version, BFT93.

BFT93W Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter -15 V
VCEO collector-emitter voltage open base -12 V
VEBO emitter-base voltage open collector -2 V
IC collector current (DC)   -50 mA
Ptot total power dissipation up to Ts =93 °C; note 1 300 mW
Tstg storage temperature   −65 +150
Tj junction temperature   150

BFT93W Features

• High power gain
• Gold metallization ensures excellent reliability
• SOT323 (S-mini) package.

BFT93W Typical Application

It is intended as a general purpose transistor for wideband applications up to 2 GHz.

BFT93W datasheet

BFT93W
PDF/DataSheet Download

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