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BFY450
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DataSheet
General Description
BFY450 Maximum Ratings
| PARAMETER | SYMBOL | VALUE | UNIT |
| Collector-Base Voltage | VCBO | 15 | V |
| Collector-Emitter Voltage | VCEO | 4.5 | V |
| Emitter-Base Voltage | VEBO | 1.5 | V |
| Base current | IB | 10 | mA |
| Collector current | IC | 100 | mA |
| Total power dissipation TS 110°C1), 2) |
Ptot | 450 | mW |
| Junction temperature | Tj | 175 | |
| Ambient temperature | TA | -65 ... +175 | |
| Storage temperature | Tstg | -65 ... +175 | |
| Thermal Resistance | |||
| Junction - soldering point2) | RthJS | < 145 | K/W |
Notes.:
1) At TS = + 110 °C. For TS > + 110 °C derating is required.
2) TS is measured on the collector lead at the soldering point to the pcb.
BFY450 Features
• HiRel Discrete and Microwave Semiconductor
• For Medium Power Amplifiers
• Compression Point P-1dB =19dBm 1.8 GHz
Max. Available Gain Gma = 16dB at 1.8 GHz
• Hermetically sealed microwave package
• Transition Frequency fT = 20 GHz
• SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
• Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
• For Medium Power Amplifiers
• Compression Point P-1dB =19dBm 1.8 GHz
Max. Available Gain Gma = 16dB at 1.8 GHz
• Hermetically sealed microwave package
• Transition Frequency fT = 20 GHz
• SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
• Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
BFY450
PDF/DataSheet Download
- Datasheet: BFY450
- File Size: 413236 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
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