BGA2011

Features: • Low current, low voltage• High linearity• High power gain• Low noise• Integrated temperature compensated biasing• Control pin for adjustment bias current.Application• RF front end• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.Specifica...

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SeekIC No. : 004300082 Detail

BGA2011: Features: • Low current, low voltage• High linearity• High power gain• Low noise• Integrated temperature compensated biasing• Control pin for adjustment bias curr...

floor Price/Ceiling Price

Part Number:
BGA2011
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/2

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Product Details

Description



Features:

• Low current, low voltage
• High linearity
• High power gain
• Low noise
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.



Application

• RF front end
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.



Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VS DC supply voltage RF input AC coupled 4.5 V
VC voltage on control pin   VS V
IS supply current forced by DC voltage on RF input 30 mA
IC control current   0.25 mA
Ptot total power dissipation Ts 100 °C 135 mW
Tstg storage temperature   −65 +150
Tj operating junction temperature   150



Description

Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier BGA2011 consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package.




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