Features: • Low current, low voltage• High linearity• High power gain• Low noise• Integrated temperature compensated biasing• Control pin for adjustment bias current.Application• RF front end• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.Specifica...
BGA2011: Features: • Low current, low voltage• High linearity• High power gain• Low noise• Integrated temperature compensated biasing• Control pin for adjustment bias curr...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VS | DC supply voltage | RF input AC coupled | − | 4.5 | V |
VC | voltage on control pin | − | VS | V | |
IS | supply current | forced by DC voltage on RF input | − | 30 | mA |
IC | control current | − | 0.25 | mA | |
Ptot | total power dissipation | Ts 100 °C | − | 135 | mW |
Tstg | storage temperature | −65 | +150 | ||
Tj | operating junction temperature | − | 150 |
Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier BGA2011 consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package.