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BGU2003

Features: • Low current• Very high power gain• Low noise figure• Integrated temperature compensated biasing• Control pin for adjustment bias current• Supply and RF output pin combined.Application• RF front end• Wideband applications, e.g. analog and ...

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BGU2003: Features: • Low current• Very high power gain• Low noise figure• Integrated temperature compensated biasing• Control pin for adjustment bias current• Supply and R...

BGU2003 Data Sheet

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Part Number:
BGU2003
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

• Low current
• Very high power gain
• Low noise figure
• Integrated temperature compensated biasing
• Control pin for adjustment bias current
• Supply and RF output pin combined.


Application

• RF front end
• Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
• Low noise amplifiers
• Satellite television tuners (SATV)
• High frequency oscillators.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VS supply voltage RF input AC coupled − 4.5 V
VCTRL voltage on control pin   − 2 V
IS supply current (DC) forced by DC voltage on RF input
or ICTRL		 − 30 mA
ICTRL control current   − 3 mA
Ptot total power dissipation Ts 100 °C − 135 mW
Tstg storage temperature   −65 +150
Tj operating junction temperature   − 150



Description

Silicon MMIC amplifier BGU2003 consisting of an NPN double  polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.




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