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Part Number: BH616UV8010
Description: The BH616UV8010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 by 16 bits...
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BH616UV8010
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DataSheet
General Description
BH616UV8010 General Description
The BH616UV8010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25 and maximum access time of 70ns at 1.8V/85. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers.
The BH616UV8010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
The BH616UV8010 is available in DICE form, JEDEC standard 48-pin TSOP-I and 48-ball BGA package.
BH616UV8010 Maximum Ratings
| Symbol | Parameter | Ratings | Unit | |
| VTERM | Terminal Voltage with Respect to GND |
-0.5(2) to 4.6V |
V | |
| TBIAS | Temperature Under Bias |
-40 to +125 | °C | |
| TSTG | Storage Temperature | -60 to +150 | °C | |
| PT | Power Dissipation | 1.0 | w | |
| IOUT | DC Output Current | 20 | mA |
BH616UV8010 Features
* Wide VCC low operation voltage : 1.65V ~ 3.6V
*Ultra low power consumption :
VCC = 3.0V Operation current : 5.0mA at 70ns at 25
1.5mA at 1MHz at 25
Standby current : 2.5uA at 25
VCC = 2.0V Data retention current : 2.5uA at 25
* High speed access time :
-70 70ns at 1.8V at 85
*Automatic power down when chip is deselected
* Easy expansion with CE1, CE2 and OE options
*I/O Configuration x8/x16 selectable by LB and UB pin.
* Three state outputs and TTL compatible
* Fully static operation, no clock, no refreash
* Data retention supply voltage as low as 1.0V
*Ultra low power consumption :
VCC = 3.0V Operation current : 5.0mA at 70ns at 25
1.5mA at 1MHz at 25
Standby current : 2.5uA at 25
VCC = 2.0V Data retention current : 2.5uA at 25
* High speed access time :
-70 70ns at 1.8V at 85
*Automatic power down when chip is deselected
* Easy expansion with CE1, CE2 and OE options
*I/O Configuration x8/x16 selectable by LB and UB pin.
* Three state outputs and TTL compatible
* Fully static operation, no clock, no refreash
* Data retention supply voltage as low as 1.0V
BH616UV8010 Connection Diagram
BH616UV8010
PDF/DataSheet Download
- Datasheet: BH616UV8010
- File Size: 141602 KB
- Manufacturer: BSI [Brilliance Semiconductor]
- Click here to Download
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