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BLA0912-250

Transistors RF MOSFET Power LDMOS TNS

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SeekIC No. : 00220762 Detail

BLA0912-250: Transistors RF MOSFET Power LDMOS TNS

BLA0912-250 Data Sheet

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Part Number:
BLA0912-250
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 0.96 GHz to 1.215 GHz Gain : 13 dB
Output Power : 250 W Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 300 mA Gate-Source Breakdown Voltage : +/- 22 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-502A
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gain : 13 dB
Output Power : 250 W
Frequency : 0.96 GHz to 1.215 GHz
Package / Case : SOT-502A
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 22 V
Continuous Drain Current : 300 mA


Features:

*High power gain
*Easy power control
*Excellent ruggedness
* Source on mounting base eliminates DC isolators, reducing common mode inductance.


Application

n Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN.


Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLA0912-250 encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.


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