BLA1011-2

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Output Power : 2 W
Gain : 16 dB
Frequency : 1.03 GHz to 1.09 GHz
Continuous Drain Current : 2.2 A
Package / Case : SOT-538A
Drain-Source Breakdown Voltage : 75 V


Features:

· High power gain
· Easy power control
· Excellent ruggedness
· Source on mounting base eliminates DC isolators, reducing common mode inductance.


Application

· Avionics applications in the 1030 to 1090 MHz frequency range.


Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			75	V
VGS	gate-source voltage			±15	V
ID	DC drain current			2.2	A
Ptot	total power dissipation	up to Tmb = 25  C;		10	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLA1011-2 encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.