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Description: Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead flange package (...


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BLF0810S-90 General Description


Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead flange package (BLF0810-90) with a ceramic cap or in a 2-lead earless package (BLF0810S-90). The common source is connected to the flange.

Typical CDMA IS95 performance at standard settings at a supply voltage of 27 V and IDQ =500mA

PL =18W

GP =16dB

=26%

ACPR <−45 dBc at 750 kHz and BW = 30 kHz

ACPR <−63 dBc at 1.98 MHz and BW = 30 kHz

BLF0810S-90 Maximum Ratings

SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage 75 V
VGS gate-source voltage ±15 V
Tstg storage temperature −65 +150 °C
Tj junction temperature 200 °C

BLF0810S-90 Features

• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing common mode inductance
• Designed for broadband operation (750 MHz to 1 GHz).

BLF0810S-90 Typical Application

• Common source class-AB operation in CDMA applications in the 750 to 960 MHz frequency range.

BLF0810S-90 datasheet

BLF0810S-90
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