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BLF0810S-90

Features: • High power gain• Easy power control• Excellent ruggedness• Source on underside eliminates DC isolators, reducing common mode inductance• Designed for broadband operation (750 MHz to 1 GHz).Application• Common source class-AB operation in CDMA applica...

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SeekIC No. : 004300533 Detail

BLF0810S-90: Features: • High power gain• Easy power control• Excellent ruggedness• Source on underside eliminates DC isolators, reducing common mode inductance• Designed for broadb...

BLF0810S-90 Data Sheet

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Part Number:
BLF0810S-90
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing common mode inductance
• Designed for broadband operation (750 MHz to 1 GHz).


Application

• Common source class-AB operation in CDMA applications in the 750 to 960 MHz frequency range.


Specifications

SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage − 75 V
VGS gate-source voltage − ±15 V
Tstg storage temperature −65 +150 °C
Tj junction temperature − 200 °C



Description

Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead flange package (BLF0810-90) with a ceramic cap or in a 2-lead earless package (BLF0810S-90). The common source is connected to the flange.

Typical CDMA IS95 performance at standard settings at a supply voltage of 27 V and IDQ =500mA

PL =18W

GP =16dB

=26%

ACPR <−45 dBc at 750 kHz and BW = 30 kHz

ACPR <−63 dBc at 1.98 MHz and BW = 30 kHz




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