BLF1043

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Frequency : 1 GHz
Gain : 18.5 dB at 960 MHz
Output Power : 10 W
Continuous Drain Current : 2.2 A
Package / Case : SOT-538A


Features:

* High power gain
* Easy power control
* Excellent ruggedness
* Source on mounting base eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (HF to 1 GHz).


Application

* Communication transmitter applications in the UHF frequency range.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			75	V
VGS	gate-source voltage			15	V
ID	DC drain current			2.2	A
Ptot	total power dissipation	Tmb 85 °C		tbf	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLF1043 encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.