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Part Number: BLF1043

 

 

Package Cooled: 500

 

Description: Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with ...


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BLF1043 General Description


Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.

BLF1043 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 75 V
VGS gate-source voltage 15 V
ID DC drain current 2.2 A
Ptot total power dissipation Tmb 85 °C tbf W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C

BLF1043 Features

* High power gain
* Easy power control
* Excellent ruggedness
* Source on mounting base eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (HF to 1 GHz).

BLF1043 Typical Application

* Communication transmitter applications in the UHF frequency range.

BLF1043 Connection Diagram

BLF1043  Connection Diagram

BLF1043 datasheet

BLF1043
PDF/DataSheet Download

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