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BLF2022-120

Features: * High power gain* Easy power control* Excellent ruggedness* Source on underside eliminates DC isolators, reducing common mode inductance* Designed for broadband operation (HF to 2.2 GHz).Application* Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz f...

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SeekIC No. : 004300543 Detail

BLF2022-120: Features: * High power gain* Easy power control* Excellent ruggedness* Source on underside eliminates DC isolators, reducing common mode inductance* Designed for broadband operation (HF to 2.2 GHz)....

BLF2022-120 Data Sheet

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Part Number:
BLF2022-120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing  common mode inductance
* Designed for broadband operation (HF to 2.2 GHz).


Application

* Common source class-AB operation for PCN and PCS  applications in the 2000 to 2200 MHz frequency range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±15 V
ID DC drain current 18 A
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Push-pull silicon N-channel enhancement mode lateral  D-MOS transistor BLF2022-120 encapsulated in a 4-lead flange package
(SOT539A) with a ceramic cap. The common source is  connected to the mounting flange.


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