Purchase BLF2022-125, In-stock BLF2022-125 From SeekIC.
MFG:PHILIPS
Part Number: BLF2022-125
MFG: PHILIPS
Description: 125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.
- Table of contents:
BLF2022-125
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Suppliers
DataSheet
General Description
BLF2022-125 General Description
125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.
BLF2022-125 Maximum Ratings
| SYMBOL | PARAMETER | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | − | 65 | V |
| VGS | gate-source voltage | − | ±15 | V |
| ID | DC drain current | − | tbd | A |
| Tstg | storage temperature | −65 | +150 | °C |
| Tj | junction temperature | − | 200 | °C |
BLF2022-125 Features
• Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A
Output power = 20 W (AV)
Gain = 12 dB
Efficiency = 19%
ACPR = −42 dBc at 3.84 MHz
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use.
Output power = 20 W (AV)
Gain = 12 dB
Efficiency = 19%
ACPR = −42 dBc at 3.84 MHz
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use.
BLF2022-125 Typical Application
• RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range
BLF2022-125
PDF/DataSheet Download
- Datasheet: BLF2022-125
- File Size: 49531 KB
- Manufacturer: Philips
- Click here to Download
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