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BLF2022-125

Features: • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A Output power = 20 W (AV) Gain = 12 dB Efficiency = 19% ACPR = −42 dBc at 3.84 MHz• Easy power control• Excellent ruggedness• High power gain• Excellent thermal stability•...

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BLF2022-125: Features: • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A Output power = 20 W (AV) Gain = 12 dB Efficiency = 19% ACPR = −42 dBc at 3.84 MHz• Easy power ...

BLF2022-125 Data Sheet

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Part Number:
BLF2022-125
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A
   Output power = 20 W (AV)
   Gain = 12 dB
   Efficiency = 19%
   ACPR = −42 dBc at 3.84 MHz
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use.


Application

• RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range


Specifications

SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage − 65 V
VGS gate-source voltage − ±15 V
ID DC drain current − tbd A
Tstg storage temperature −65 +150 °C
Tj junction temperature − 200 °C



Description

125 W LDMOS power transistor BLF2022-125 for base station applications at frequencies from 2000 to 2200 MHz.




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