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MFG:NXP  D/C:09+  

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Part Number: BLF2047L

 

MFG: NXP

 

D/C: 09+

Description: Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a cer...


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BLF2047L General Description


Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.

BLF2047L Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±15 V
ID DC drain current 12 A
Tstg storage temperature -65 150 C
Tj junction temperature 200 C

BLF2047L Features

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (1.8 to 2.0 GHz)
* Internal input and output matching for high gain and efficiency.

BLF2047L Typical Application

* Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range.

BLF2047L Connection Diagram

BLF2047L  Connection Diagram

BLF2047L datasheet

BLF2047L
PDF/DataSheet Download

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BLF2047L Relative Products

  • BLF2047

    BLF2047

    Silicon N-channel enhancement mode lateral D-MOS transistor BLF2047 encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange.

  • BLF2045

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    Silicon N-channel enhancement mode lateral D-MOS transistor BLF2045 encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.

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  • BLF2043

    BLF2043

    Silicon N-channel enhancement mode lateral D-MOS transistor BLF2043 encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.

  • BLF2022-90

    BLF2022-90

    90 W LDMOS power transistor BLF2022-90 for base station applications at frequencies from 2000 to 2200 MHz.

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