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BLF242

Features: * High power gain* Low noise* Easy power control* Good thermal stability* Withstands full load mismatch* Gold metallization ensures excellent reliability.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V V...

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SeekIC No. : 004300553 Detail

BLF242: Features: * High power gain* Low noise* Easy power control* Good thermal stability* Withstands full load mismatch* Gold metallization ensures excellent reliability.PinoutSpecifications ...

BLF242 Data Sheet

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Part Number:
BLF242
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* High power gain
* Low noise
* Easy power control
* Good thermal stability
* Withstands full load mismatch
* Gold metallization ensures excellent reliability.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage 20 V
ID DC drain current 1 A
Ptot total power dissipation up to Tmb = 25 °C 16 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF242 designed for professional transmitter applications in the HF/VHF frequency range.

The transistor BLF242 is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.


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