BLF245

Configuration :
Transistor Polarity :
Frequency :
Gain :
Output Power :
Drain-Source Breakdown Voltage :
Continuous Drain Current :
Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Package / Case :
Packaging : Tray


Features:

· High power gain
· Low noise figure
· Easy power control
· Good thermal stability
· Withstands full load mismatch.


Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			20	V
ID	DC drain current			6	A
Ptot	total power dissipation	up to Tmb = 25 C; total device;both sections equally loaded		68	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF245 designed for large signal amplifier applications in the VHF frequency range.

The transistor BLF245 is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.

Matched gate-source voltage (VGS) groups are available on request.