BLF245B

Features:

· High power gain
· Easy power control
· Good thermal stability
· Gold metallization ensures excellent reliability.


Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			20	V
ID	DC drain current			4.5	A
Ptot	total power dissipation	up to Tmb = 25  C; total device;both sections equally loaded		75	W
Tstg	storage temperature		65	150	C
Tj	junction temperature			200	C

Description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF245B designed for large signal amplifier applications in the VHF frequency range.
 
The BLF245B is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic cap. The mounting flange provides the common source connection for the transistors.