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BLF348

Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V VGS gate-source voltage 20 V ID DC drain current 25 A Ptot total power dissipation up to Tmb = 25 C; total device;both sections equally loaded ...

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BLF348: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V VGS gate-source voltage 20 V ID DC drain current 25...

BLF348 Data Sheet

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Part Number:
BLF348
Supply Ability:
5000

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Description



Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage 20 V
ID DC drain current 25 A
Ptot total power dissipation up to Tmb = 25  C; total device;both sections equally loaded 500 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF348, designed for broadcast transmitter applications in the VHF frequency range.

The BLF348 is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The  mounting flange provides the common source connection for the transistors.




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