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BLF4G20S-110B,112

Transistors RF MOSFET Power LDMOS TNS

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SeekIC No. : 00220539 Detail

BLF4G20S-110B,112: Transistors RF MOSFET Power LDMOS TNS

BLF4G20S-110B,112 Data Sheet

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Part Number:
BLF4G20S-110B,112
Mfg:
NXP Semiconductors
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 65 V Continuous Drain Current : 12 A
Gate-Source Breakdown Voltage : 15 V Maximum Operating Temperature : + 150 C
Package / Case : LDMOST-3 Packaging : Tube    

Description

Frequency :
Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : 15 V
Continuous Drain Current : 12 A
Package / Case : LDMOST-3


Parameters:

Technical/Catalog InformationBLF4G20S-110B,112
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeLDMOS
Voltage - Rated 28V
Current Rating3uA
Package / Case2-LDMOST, SOT502B
PackagingTray
Drawing Number568; SOT502; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BLF4G20S 110B,112
BLF4G20S110B,112
568 2415 ND
5682415ND
568-2415



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