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BLF521

Features: * High power gain* Easy power control* Gold metallization* Good thermal stability* Withstands full load mismatch* Designed for broadband operation.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 40 V VGS gat...

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SeekIC No. : 004300563 Detail

BLF521: Features: * High power gain* Easy power control* Gold metallization* Good thermal stability* Withstands full load mismatch* Designed for broadband operation.PinoutSpecifications S...

BLF521 Data Sheet

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Part Number:
BLF521
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

* High power gain
* Easy power control
* Gold metallization
* Good thermal stability
* Withstands full load mismatch
* Designed for broadband operation.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 40 V
VGS gate-source voltage 20 V
ID DC drain current 1 A
Ptot total power dissipation up to Tmb =25 °C 10 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF521 designed for communications transmitter applications in the UHF frequency range.

The transistor BLF521 is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base.


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