BLF647,112, US $ 91.09-96 , NXP Semiconductors, BLF647,112 DataSheet download, circuit diagram from SeekIC.com

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BLF647,112: Transistors RF MOSFET Power RF LDMOS 150W UHF

BLF647,112 Data Sheet

US $ 91.09~96 / Piece | Get Latest Price

Part Number:: BLF647,112
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Recent History
What is this?

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PinoutDescriptionThe BLF647 has six features.(1)high power gain.(2)easy power control.(3)excellent...

Product Details

Quick Details

Configuration :	Dual	Transistor Polarity :	N-Channel
Frequency :	800 MHz	Gain :	12.5 dB
Output Power :	150 W	Drain-Source Breakdown Voltage :	65 V
Continuous Drain Current :	18 A	Gate-Source Breakdown Voltage :	+/- 15 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	SOT-540A
Packaging :	Tube

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Output Power : 150 W
Continuous Drain Current : 18 A
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : SOT-540A
Frequency : 800 MHz
Gain : 12.5 dB

Parameters:

Technical/Catalog Information	BLF647,112
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	2 N-Channel (Dual)
Voltage - Rated	65V
Current Rating	18A
Package / Case	4-LDMOST, SOT540A
Packaging	Tray
Drawing Number	568; SOT540; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BLF647,112 BLF647,112 568 2419 ND 5682419ND 568-2419

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BLF647,112

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