Transistors RF MOSFET Power LDMOS TNS
BLF6G10LS-135R,112: Transistors RF MOSFET Power LDMOS TNS
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| Configuration : | Single | Transistor Polarity : | N-Channel | ||
| Drain-Source Breakdown Voltage : | 65 V | Continuous Drain Current : | 32 A | ||
| Gate-Source Breakdown Voltage : | 13 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | SOT502B | Packaging : | Tube |
| Technical/Catalog Information | BLF6G10LS-135R,112 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Transistor Type | LDMOS |
| Voltage - Rated | 65V |
| Current Rating | 32A |
| Package / Case | 2-LDMOST, SOT502B |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BLF6G10LS 135R,112 BLF6G10LS135R,112 |