Transistors RF MOSFET Power LDMOS TNS
BLF6G10LS-135R,118: Transistors RF MOSFET Power LDMOS TNS
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 0.7 GHz to 1 GHz | Gain : | 21 dB |
| Output Power : | 26.5 W | Drain-Source Breakdown Voltage : | 65 V |
| Continuous Drain Current : | 32 A | Gate-Source Breakdown Voltage : | +/- 13 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-502B |
| Packaging : | Reel |
| Technical/Catalog Information | BLF6G10LS-135R,118 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Transistor Type | LDMOS |
| Voltage - Rated | 65V |
| Current Rating | 32A |
| Package / Case | 2-LDMOST, SOT502B |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BLF6G10LS 135R,118 BLF6G10LS135R,118 |