Transistors RF MOSFET Power LDMOS TNS
BLF6G22-180PN,112: Transistors RF MOSFET Power LDMOS TNS
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| Configuration : | Dual Common Source | Transistor Polarity : | N-Channel |
| Drain-Source Breakdown Voltage : | 65 V | Gate-Source Breakdown Voltage : | 13 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | SOT502B |
| Packaging : | Tube |
| Technical/Catalog Information | BLF6G22-180PN,112 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Transistor Type | LDMOS |
| Voltage - Rated | 65V |
| Current Rating | - |
| Package / Case | 5-LDMOST, SOT539A |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BLF6G22 180PN,112 BLF6G22180PN,112 |