Transistors RF MOSFET Power POWER LDMOS TRANSISTOR
BLF6G22LS-40P,112: Transistors RF MOSFET Power POWER LDMOS TRANSISTOR
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| Configuration : | Dual | Transistor Polarity : | N-Channel |
| Frequency : | 2.1 GHz | Gain : | 19 dB |
| Output Power : | 13.5 W | Drain-Source Breakdown Voltage : | 65 V |
| Continuous Drain Current : | 16 A | Gate-Source Breakdown Voltage : | 13 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-1121B |
| Packaging : | Tube |