Transistors RF MOSFET Power Pwr LDMOS transistor
BLF6G22-180PN,135: Transistors RF MOSFET Power Pwr LDMOS transistor
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| Configuration : | Dual | Transistor Polarity : | N-Channel |
| Frequency : | 2 GHz to 2.2 GHz | Gain : | 17.5 dB |
| Output Power : | 50 W | Drain-Source Breakdown Voltage : | 65 V |
| Continuous Drain Current : | 25 A | Gate-Source Breakdown Voltage : | 13 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-539A |
| Packaging : | Reel |