Transistors RF MOSFET Power LDMOS TNS
BLF6G27LS-135,112: Transistors RF MOSFET Power LDMOS TNS
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 2.5 GHz to 2.7 GHz | Gain : | 16 dB |
| Output Power : | 20 W | Drain-Source Breakdown Voltage : | 65 V |
| Continuous Drain Current : | 34 A | Gate-Source Breakdown Voltage : | 13 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-502B |
| Packaging : | Tube |
| Technical/Catalog Information | BLF6G27LS-135,112 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Transistor Type | LDMOS |
| Voltage - Rated | 65V |
| Current Rating | 34A |
| Package / Case | 2-LDMOST, SOT502B |
| Packaging | Tray |
| Drawing Number | 568; SOT502; ; |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BLF6G27LS 135,112 BLF6G27LS135,112 |