BLF872,112

Transistors RF MOSFET Power RF LDMOS 300W UHF

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SeekIC No. : 00220334 Detail

BLF872,112: Transistors RF MOSFET Power RF LDMOS 300W UHF

floor Price/Ceiling Price

Part Number:
BLF872,112
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Dual Common Source Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 65 V Gate-Source Breakdown Voltage : +/- 13 V
Maximum Operating Temperature : + 150 C Package / Case : LDMOST-3
Packaging : Tube    

Description

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Configuration : Dual Common Source
Gate-Source Breakdown Voltage : +/- 13 V
Package / Case : LDMOST-3


Parameters:

Technical/Catalog InformationBLF872,112
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeLDMOS
Voltage - Rated 65V
Current Rating2.2uA
Package / Case4-LDMOST, SOT800-1
PackagingTray
Drawing Number568; SOT800; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BLF872,112
BLF872,112
568 2408 ND
5682408ND
568-2408



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