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BLS2731-10

Features: * Suitable for short and medium pulse applications* Internal input and output matching networks for an easy circuit design* Emitter ballasting resistors improve ruggedness* Gold metallization ensures excellent reliability* Interdigitated emitter-base structure provides high emitter effic...

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SeekIC No. : 004300642 Detail

BLS2731-10: Features: * Suitable for short and medium pulse applications* Internal input and output matching networks for an easy circuit design* Emitter ballasting resistors improve ruggedness* Gold metallizat...

BLS2731-10 Data Sheet

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Part Number:
BLS2731-10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

* Suitable for short and medium pulse applications
* Internal input and output matching networks for an easy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicell geometry improves power sharing and reduces thermal resistance.


Application

* Common base class-C pulsed power amplifier for radar applications in the 2.7 to 3.1 GHz band.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 75 V
VCES collector-emitter voltage RBE = 0  75 V
VEBO emitter-base voltage open collector 2 V
ICM peak collector current tp  100 us; 10% 1.5 A
Ptot total power dissipation tp = 100 us;   = 10%; Tmb = 25  145 W
Tstg storage temperature -65 200
Tj operating junction temperature 200
Tsld soldering temperature up to 0.2 mm from ceramic cap; t 10 s 235



Description

NPN silicon planar epitaxial microwave power transistor BLS2731-10 in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the flange.


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