Transistors RF MOSFET Power 60V 580mOhms
BLS6G2735L-30,112: Transistors RF MOSFET Power 60V 580mOhms
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 2.7 GHz to 3.5 GHz | Gain : | 13 dB |
| Output Power : | 30 W | Drain-Source Breakdown Voltage : | 60 V |
| Continuous Drain Current : | 8.2 A | Gate-Source Breakdown Voltage : | 13 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-1135A |
| Packaging : | Tube |