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Part Number: BLT94

 

 

 

 

Description: NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A package.


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BLT94 General Description


NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A package.

BLT94 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage open base  10 V
VEBO emitter-base voltage open collector 3 V
IC peak collector current 2.5 A
Ptot total power dissipation Tmb 60  13 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200

BLT94 Features

* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.

BLT94 Typical Application

* Common emitter class-AB and B operation in portable radio transmitters in the 900 MHz communication band.

BLT94 Connection Diagram

BLT94  Connection Diagram

BLT94 datasheet

BLT94
PDF/DataSheet Download

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BLT94 Relative Products

  • BLT92/SL

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    NPN silicon planar epitaxial transistor BLT92/SLprimarily intended for use in handheld radio stations in the 900 MHz communications band.BLT92/SL has been designed specifically for class-B operation.

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    TRANS NPN 9.5V 500MA SOT223

  • BLT81

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    NPN silicon planar epitaxial transistor BLT81encapsulated in a plastic SOT223 SMD package.

  • BLT80,115

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    TRANS NPN 10V 250MA SOT223

  • BLT80

    BLT80

    NPN silicon planar epitaxial transistor BLT80 encapsulated in a plastic SOT223 SMD package.

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