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Part Number: BLV45/12

 

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Description: N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmu...


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BLV45/12 General Description


N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.

BLV45/12 Maximum Ratings

Collector-base voltage (open emitter)peak value VCBSM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16.5v
Emitter-base voltage (open collector)  Vebo  max. 4v
Collector current
d.c. or average    IC  max. 9 A
(peak value); f > 1 MHz   ICM  max. 27 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 90 W
Storage temperature  Tstg          -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C

BLV45/12 Features

* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal matching to achieve an optimum wideband capability and high power gain

BLV45/12 Connection Diagram

BLV45/12 Connection Diagram

BLV45/12 datasheet

BLV45/12
PDF/DataSheet Download

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Related Part Number

BLV45/12 Relative Products

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