BLW76

Configuration :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Maximum DC Collector Current :
Power Dissipation :
Package / Case :
Packaging :


Pinout




Specifications

Collector-base voltage (open emitter)peak value	VCESM	max.	70v
Collector-emitter voltage (open base)	Vceo	max.	35v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current (average)	IC(AV)	max.	8 A
Collector current (peak value); f > 1 MHz	ICM	max.	20 A
D.C. and r.f. (f > 1 MHz) power
dissipation; Tmb = 25 °C	Ptot ,Prf	max.	140 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW76 intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor BLW76 presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load
mismatch conditions. Transistors are delivered in matched hFE groups.

The BLW76 has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.