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BMT1417B26

Features: • Common Base, Class C Package Configuration• High Output Power 26 W@ 1.4 to 1.7 GHz• High Gain Bandwidth Product ft= 6.0 GHz @ IC = 4.16 A• High Gain GPE = 7.0 dB to 8.2 dB• High Reliability Gold Metallization Nitride Passivation• Diffused Ballast Res...

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SeekIC No. : 004300906 Detail

BMT1417B26: Features: • Common Base, Class C Package Configuration• High Output Power 26 W@ 1.4 to 1.7 GHz• High Gain Bandwidth Product ft= 6.0 GHz @ IC = 4.16 A• High Gain GPE = 7.0 dB ...

BMT1417B26 Data Sheet

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Part Number:
BMT1417B26
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Common Base, Class C Package Configuration
• High Output Power 26 W@ 1.4 to 1.7 GHz
• High Gain Bandwidth Product ft= 6.0 GHz @ IC = 4.16 A
• High Gain GPE = 7.0 dB to 8.2 dB
• High Reliability Gold Metallization Nitride Passivation
• Diffused Ballast Resistors
• BeO Packaging
• Built-In Matching Network for Broadband Operation


Specifications

SYMBOL PARAMETERS RATING UNITS
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 28 V
VEBO Emitter-Base Voltage 3.5 V
IC Collector Current (instantaneous) 4.16 A
TJ Junction Temperature 200 oC
TSTG Storage Temperature -65 to 200 oC
JC Thermal Resistance 6.5 C/W



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