Purchase BPT1819E03, In-stock BPT1819E03 From SeekIC.
Part Number: BPT1819E03
Description: Bipolarics' BPT1819E03 is a high performance silicon bipolar transistor intended for linear power appl...
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BPT1819E03
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DataSheet
General Description
BPT1819E03 General Description
Bipolarics' BPT1819E03 is a high performance silicon bipolar transistor intended for linear power applications at frequencies of 1.8 to 1.9 GHz. Typical applications include amplifiers in aeronautical, maritime and personal communication applications. The BPT1819E03 is bonded common emitter for linear applications. Linear output power of 3 Watts can be achieved. BeO flange packaging makes this device excellent for industrial and military products. Uniformity and reliability are assured by the use of ion implanted junctions, ion implanted ballast resistors and gold metallization.
BPT1819E03 Maximum Ratings
|
SYMBOL |
PARAMETERS |
RATING |
UNITS |
|
VCES VCEO VEBO IC TJ TSTG |
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature |
40 20 3.0 960 200 -65to200 |
V V V mA |
|
JC |
Thermal Resistance |
11 |
C/W |
BPT1819E03 Features
• High Output Power 3 W@ 1.8 GHz
• High Gain Bandwidth Product ft= 6.0 GHz typ @ IC = 480 mA
• High Gain GPE= 10.0 dB @ 1.8 GHz
• Gold Metallization System
• High thermal efficiency BeO 6 LeadFlange package (package 36)
• High Gain Bandwidth Product ft= 6.0 GHz typ @ IC = 480 mA
• High Gain GPE= 10.0 dB @ 1.8 GHz
• Gold Metallization System
• High thermal efficiency BeO 6 LeadFlange package (package 36)
BPT1819E03
PDF/DataSheet Download
- Datasheet: BPT1819E03
- File Size: 14885 KB
- Manufacturer: ETC [ETC]
- Click here to Download
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