BPV11F

Package / Case : T-1 3/4
Maximum Dark Current : 50 nA
Maximum Power Dissipation : 150 mW


Features:

` Very high radiant sensitivity
` Standard T1³/₄ (ø 5 mm) package
` IR filter for GaAs emitters (950 nm)
` Angle of half sensitivity = ± 15°
` Base terminal available




Application

Detector for industrial electronic circuitry, measurement and control




Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Collector Base Voltage		VCBO	80	V
Collector Emitter Voltage		VCEO	70	V
Emitter Base Voltage		VEBO	5	V
Collector Current		IC	50	mA
Peak Collector Current	tp/T = 0.5, tp 10 ms	ICM	100	mA
Total Power Dissipation	Tamb 47	Ptot	150	mW
Junction Temperature		Tj	100
Storage Temperature Range		Tstg	55...+100
Soldering Temperature	t 5 s, 2 mm from body	Tsd	260
Thermal Resistance Junction/Ambient		RthJA	350	K/W

Description

BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T1³/₄ plastic package.

The epoxy package BPV11F is an IR filter, spectrally matched to GaAs IR emitters ( p 900nm). The viewing angle of ± 15° makes it insensible to
ambient straylight.

A base terminal of BPV11F is available to enable biasing and sensitivity control.