BPW34

Product : PIN Photodiodes
Reverse Voltage : 60 V
Rise Time : 100 ns
Fall Time : 100 ns
Maximum Dark Current : 30 nA
Peak Wavelength : 900 nm
Package / Case : TO-5
Half Intensity Angle Degrees : 65 deg


Features:

*Especially suitable for applications from 400 nm to 1100 nm
*Short switching time (typ. 20 ns)
*DIL plastic package with high packing density
*BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering(JEDEC level 4)




Application

*Photointerrupters
*IR remote controls
*Industrial electronics
*For control and drive circuits




Specifications

Bezeichnung Description	Symbol Symbol	Wert Value	Einheit Unit
Betriebs- und Lagertemperatur Operating and storage temperature range	Top; Tstg	40 ... + 85
Sperrspannung Reverse voltage	VR	32	V
Verlustleistung, TA = 25 Total power dissipation	Ptot	150	mW

Description

The BPW34 is designed as a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO5 devices in many applications. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives a high sensitivity at a wide viewing angle.

BPW34 has five features. (1)Large radiant sensitive area (A=7.5mm2). (2)Wide angle of half sensitivity =±65°. (3)High photo sensitivity. (4)Fast response times. (5)Small junction capacitance. (6)Suitable for visible and near infrared radiation. Those are all the main features.

Some absolute maximum ratings of BPW34 have been concluded into several points as follow. (1)Its reverse voltage would be 60V. (2)Its power dissipation would be 215mW. (3)its junction temperature would be 100°C. (4)Its storage temperature range would be from -55°C to 100°C. (5)Its soldering temperature would be 260°C. (6)Its thermal resistance junction/ambient would be 350K/W. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of BPW34 are concluded as follow. (1)Its breakdown voltage would be min 60V. (2)Its reverse dark current would be typ 2nA and max 30nA. (3)Its diode capacitance would be typ 70pF at Vr=0V and would be typ 25pF and max 40pF at Vr=3V. (4)Its open circuit voltage would be typ 350mV. (5)Its temperature coefficient of Vo would be typ -2.6mV/K. (6)Its short circuit current would be typ 70uA at Ea=1klx. (7)Its temperature coefficient of Ik would be typ 0.1%/K. (8)Its angle of half sensitivity would be typ +/-65°. (9)Its wavelength of peak sensitivity would be typ 900nm. (10)Its range of spectral bandwidth would be typ 600 to 1050nm. (11)Its rise time would be typ 100ns. (12)Its fall time would be typ 100ns. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Silicon PIN Photodiode, RoHS Compliant




Parameters:

Technical/Catalog Information	BPW34
Vendor	OSRAM Opto Semiconductors Inc
Category	Sensors, Transducers
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BPW34 BPW34 475 1070 ND 4751070ND 475-1070