BQ4011YMA-100

Data Bus Width : 8 bit
Interface Type : Parallel
Supply Voltage - Max : 5.5 V
Maximum Operating Temperature : + 70 C
Minimum Operating Temperature : 0 C
Packaging : Tube
Operating Current : 50 mA
Package / Case : DIP Module
Access Time : 100 ns
Supply Voltage - Min : 4.5 V
Memory Size : 256 Kbit
Organization : 32 K x 8


Pinout




Description

The BQ4011YMA-100 is designed as a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. The control circuitry constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid.

BQ4011YMA-100 has six features. (1)Data retention in the absence of power. (2)Automatic write-protection during power-up/power-down cycles. (3)Industry-standard 28-pin 32Kx8 pinout. (4)Conventional SRAM operation; unlimited write cycles. (5)10-year minimum data retention in absence of power. (6)Battery internally isolated until power is applied. Those are all the main features.

Some absolute maximum ratings have been concluded into several points of BQ4011YMA-100 as follow. (1)Its DC voltage applied on Vcc relative to Vss would be from -0.3V to 7V. (2)Its DC voltage applied on any pin excluding Vcc relative to Vss would be from -0.3V to 7.0V. (3)Its operating temperature would be from 0°C to 70°C. (4)Its storage temperature range would be from -40°C to 70°C. (5)Its temperature under bias would be from -10°C to 70°C. (6)Its soldering temperature would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its input leakage current would be max +/-1uA. (2)Its output leakage current would be max +/-1uA. (3)Its output high voltage would be min 2.4V. (4)Its output low voltage would be max 0.4V. (5)Its standby supply current would be typ 4mA and max 7mA at /CE=Vih. (6)Its operating supply current would be typ 55mA and max 75mA. (7)Its power-fail-detect voltage would be min 4.55 and typ 4.62 and max 4.75. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	BQ4011YMA-100
Vendor	Texas Instruments
Category	Integrated Circuits (ICs)
Memory Type	NVSRAM (Non-Volatile SRAM)
Memory Size	256K (32K x 8)
Speed	100ns
Interface	Parallel
Package / Case	28-DIP Module (600 mil)
Packaging	Tube
Voltage - Supply	4.5 V ~ 5.5 V
Operating Temperature	0°C ~ 70°C
Format - Memory	RAM
Drawing Number	296; 4201975; MA; 28, 32
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BQ4011YMA 100 BQ4011YMA100 296 9392 5 ND 29693925ND 296-9392-5